VG3617161ET
1,048,576 x 16 - Bit
CMOS Synchronous Dynamic RAM
VIS
Read and Write Cycle (2 of 2)
Burst Length=4, CAS Latency=3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
t
CK3
CS
RAS
CAS
WE
A11(BS)
RAa
A10
A0~A9
CAa
RAa
CAb
CAc
DQM
DQ
Hi-Z
DAb0 DAb1
QAc0 QAc1
DAb3
QAa3
QAc3
QAa0 QAa1
QAa2
Write
Command
Bank A
Read
Command
Bank A
The Write Data
Activate
Command
Bank A
Read
Command
Bank A
The Read Data
is Masked with a
Zero Clock
latency
is Masked with
Two Clock
Latency
Document:1G5-0189
Rev.1
Page50