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VG3617161ET-8 参数 Datasheet PDF下载

VG3617161ET-8图片预览
型号: VG3617161ET-8
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 69 页 / 1125 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VG3617161ET  
1,048,576 x 16 - Bit  
CMOS Synchronous Dynamic RAM  
VIS  
10.2 PRECHARGE TERMINATION  
10.2.1 PRECHARGE TERMINATION in READ Cycle  
During a READ cycle, the BURST READ operation can be terminated by a PRECHARGE  
command. When the PRECHARGE command is asserted, the BURST READ operation is termi-  
nated and PRECHARGE starts.  
Read data will remain valid until zero clock(CAS latency of 1), one clock(CAS latency of 2)or  
two clocks(CAS latency of 3) after the PRECHARGE command and the same bank can be acti-  
vated again after tRP(min) from the PRECHARGE command.  
PRECHARGE TERMINATION in READ Cycle  
Burst lengh= X  
T8  
T7  
T0  
T1  
T3  
T6  
T2  
T4  
T5  
CLK  
ACT  
Read  
Read  
Read  
PRE  
Command  
tRP  
CAS latency=1  
DQ  
Hi-Z  
Q0  
Q3  
Q2  
Q1  
tRP  
PRE  
Q2  
ACT  
Command  
CAS latency=2  
DQ  
Hi-Z  
Q0  
Q3  
tRP  
Q1  
command  
ACT  
PRE  
tRP  
CAS latency=3  
DQ  
Hi-Z  
Q0  
Q3  
Q2  
Q1  
Document:1G5-0189  
Rev.1  
Page25  
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