128Mb Synchronous DRAM
P2V28S20ATP-7,-75,-8 (4-BANK x 8,388,608-WORD x 4-BIT)
P2V28S30ATP-7,-75,-8 (4-BANK x 4,194,304-WORD x 8-BIT)
P2V28S40ATP-7,-75,-8 (4-BANK x 2,097,152-WORD x 16-BIT)
ABSOLUTE MAXIMUM RATINGS
Symbol
Vdd
Parameter
Conditions
Ratings
Unit
V
Supply Voltage
with respect to Vss
-0.5 - 4.6
-0.5 - 4.6
-0.5 - 4.6
-0.5 - 4.6
Supply Voltage for Output
Input Voltage
VddQ
VI
V
with respect to VssQ
with respect to Vss
with respect to VssQ
V
VO
V
Output Voltage
Output Current
IO
Pd
mA
50
1000
mW
Power Dissipation
Ta = 25˚C
Operating Temperature
Topr
Tstg
˚C
˚C
0 - 70
Storage Temperature
-65 - 150
RECOMMENDED OPERATING CONDITIONS
(Ta=0 - 70 ˚C ,unless otherwise noted)
Limits
Typ.
Symbol
Parameter
Unit
Min.
3.0
0
Max.
Supply Voltage
Vdd
Vss
3.6
V
V
3.3
0
Supply Voltage
VddQ
VssQ
Supply Voltage for output
3.0
0
3.6
V
V
3.3
0
Supply Voltage for output
0
High-Level Input Voltage all inputs
VddQ +0.3
0.8
2.0
VIH*1
VIL*2
V
V
Low-level Input Voltage all inputs
-0.3
NOTES:
1. VIH(max)=5.5V for pulse width less than 10ns.
2. VIL(min)=-1.0V for pulse width less than 10ns.
CAPACITANCE
(Ta=0 -70˚C,Vdd=VddQ=3.3± 0.3V,Vss=VssQ=0V,unless otherwise noted)
Limits (max.)
Limits (min.)
Symbol
Test Condition
Parameter
Unit
pF
-7
-75/-8
3.8
3.8
3.5
6.5
5.0
2.5
2.5
2.5
4.0
CI(A)
CI(C)
CI(K)
CI/O
Input Capacitance, address pin
Input Capacitance, contorl pin
@ 1MHz
1.4V bias
200mV swing
Vcc=3.3V
pF
pF
pF
5.0
4.0
Input Capacitance, CLK pin
Input Capacitance, I/O pin
6.5
JULY.2000
Rev.2.2
Page-31
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
