VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
Quad Transceiver
for Gigabit Ethernet
VSC7186
DC Characteristics
Parameters
Description
Min.
Typ
Max. Units
Conditions
TTL Outputs
VOH
TTL output HIGH voltage
TTL output LOW voltage
2.4
—
—
—
V
V
IOH = -1.0mA
IOL = +1.0mA
VOL
—
0.5
When set to high-impedance
state through JTAG.
IOZ
TTL output Leakage current
—
—
50
µA
TTL Inputs
VIH
VIL
IIH
TTL input HIGH voltage
TTL input LOW voltage
TTL input HIGH current
TTL input LOW current
2.0
0
—
—
50
—
5.5
0.8
V
V
5V Tolerant Inputs
—
—
500
-500
µA
µA
VIN =2.4V
VIN =0.5V
IIL
High Speed Outputs
TX Output differential peak-
to-peak voltage swing
75Ω to VDD – 2.0 V
(Ti+) - (Ti-)
mVp-
p
(1)
∆VOUT75
∆VOUT50
1200
1000
—
—
2200
2200
Ti Output differential peak-
to-peak voltage swing
50Ω to VDD – 2.0 V
(Ti+) - (Ti-)
mVp-
p
(1)
High Speed Inputs
PECL differential peak-to-peak
input voltage swing
(1)
∆VIN
200
—
2600
mV
Ri+ - Ri-
Miscellaneous
VDD
PD
Power supply voltage
Power dissipation
3.14
—
3.47
2.67
V
3.3V + 5%
—
2.2
W
Maximum at 3.47V, Outputs
o
Open, 25 C, 136MHz Ck,
IDD
Supply current (All Supplies)
Supply current on VDDA
—
—
—
770
mA
mA
7
PRBS 2 -1 parallel input pattern
IDDA
100
—
Note: (1) Refer to Application Note, AN-37, for differential measurement techniques.
Page 8
VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52306-0, Rev. 2.0
3/27/00
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
