CPV363M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
0.01
t
1
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
DM
J
thJC
1
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
1.0
1500
1200
900
600
300
0
V
V
T
= 480V
= 15V
V
= 0V,
f = 1MHz
C SHORTED
ce
CC
GE
J
GE
C
= C + C
ies
ge
gc ,
°
= 25 C
C
= C
res
gc
C
= C + C
I
= 6.0A
0.8
0.6
0.4
0.2
0.0
C
oes
ce
gc
C
ies
C
C
oes
res
1
10
100
0
10
20
30
40
50
V
CE
, Collector-to-Emitter Voltage (V)
R
R
G
, Gate Resistance (Ω)
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
20
10
10Ω
V
CC
I
C
= 400V
= 6.0A
R
V
V
= 23 Ω
= 15V
G
GE
CC
= 480V
16
12
8
I
I
I
= 12 A
= 6 A
= 3 A
C
C
C
1
4
0
0.1
0
20
40
60
80
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
Q
, Total Gate Charge (nC)
T , Junction Temperature ( C )
G
J
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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