CPV363M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
GATE VOLTAGE D.U.T.
+Vg
10% +Vg
Same type
device as
D.U.T.
DUT VOLTAGE
AND CURRENT
Vce
10% Ic
td(on)
80 %
of VCE
430 µF
Vcc
Ipk
90% Ic
Ic
D.U.T.
5% Vce
tr
t2
Vce ie dt
Eon =
t2
Vce Ic dt
t1
t1
Fig. 18a - Test Circuit for Measurements of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
90% Vge
trr
id dt
tx
trr
Qrr =
Ic dt
+Vge
Ic
tx
Vce
10% Irr
10% Vcc
Vcc
90% Ic
Vpk
10% Vce
Ic
Irr
Ic
5% Ic
DIODE RECOVERY
WAVEFORMS
td(off)
tf
t1+5μS
Eoff = Vce ic dt
Vce Ic dt
t4
t1
Erec = Vd id dt
Vd Ic dt
t3
DIODE REVERSE
RECOVERY ENERGY
t3
t4
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit
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Document Number: 94485
Revision: 01-Sep-08
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