CPV363M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
600
400
200
0
160
120
80
V = 200V
R
V = 200V
R
T = 125°C
J
T = 125°C
J
T = 25°C
J
T = 25°C
J
I
= 24A
F
I
= 12A
F
I
= 24A
I
= 6.0A
F
F
I
= 12A
F
40
I
= 6.0A
F
0
100
1000
100
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 14 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 16 - Typical Stored Charge vs. dIF/dt
10000
1000
100
100
VR= 200V
TJ = 125°C
TJ = 25°C
V = 200V
R
T = 125°C
J
T = 25°C
J
I
F
= 6.0A
I
= 24A
F
I
= 12A
F
10
I
= 6.0A
F
I
= 12A
F
I
= 24A
F
1
100
10
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dIF/dt
Fig. 17 - Typical dI(rec)M/dt vs dIF/dt
Document Number: 94485
Revision: 01-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
7
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