CPV363M4KPbF
IGBT SIP Module
(Short Circuit Rated
Ultrafast IGBT)
Vishay High Power Products
3.50
12
10
8
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
2.92
2.33
1.75
1.17
6
4
0.58
2
0.00
100
0
0.1
1
10
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of Fundamental)
12
9
100
VGE = 15V
T = 25oC
J
T = 150oC
J
10
1
6
3
V
= 15V
GE
20μs PULSE WIDTH
0
0.1
1
10
25
50
75
100
125
150
V
, Collector-to-Emitter Voltage (V)
T
, Case Temperature (°C)
CE
C
Fig. 2 - Typical Output Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
100
10
1
3.0
V
= 15V
GE
80 us PULSE WIDTH
T = 150oC
J
I
=
12A
C
2.0
I
I
=
=
6A
3A
C
C
T = 25oC
J
V
= 50V
CC
5μs PULSE WIDTH
1.0
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
10
15
°
T
, Junction Temperature ( C)
V
, Gate-to-Emitter Voltage (V)
J
GE
Fig. 3 - Typical Transfer Characteristics
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94485
Revision: 01-Sep-08
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