V23990-P588-A41-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
V
CE [V] or
DS [V]
Tj
Min
Max
V
GS [V]
V
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
0.8
1.29
1.24
0.93
0.82
7
1.6
VF
Vto
rt
Forward voltage
50
50
50
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mΩ
mA
9
0.02
2
Ir
1600
Thermal grease
thickness≤50μm
λ=0.61W/mK
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1.77
N/A
K/W
Inverter Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5.80
6.5
2.25
0.005
200
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. diode
Gate-emitter leakage current
Integrated gate resistor
VCE=VGE
0.0005
15
V
V
1.6
1.84
2.25
15
0
1200
0
mA
nA
Ω
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
85.2
84.8
17.0
21.8
201
264
82.1
123
0.82
1.26
0.88
1.36
Turn-on delay time
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=32Ω
Rgon=32Ω
±15
600
15
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
900
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
80
Reverse transfer capacitance
Gate charge
55
±15
120
1.67
N/A
nC
Thermal grease
thickness≤50μm
λ=0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1.3
1.85
1.79
24.6
25.9
153
2.2
VF
IRRM
trr
Diode forward voltage
15
15
V
A
Peak reverse recovery current
Reverse recovery time
ns
313
1.35
2.98
1700
776
0.52
1.26
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Rgoff=32Ω
±15
600
μC
di(rec)max
/dt
A/μs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50μm
λ=0.61W/mK
2.17
N/A
K/W
copyright Vincotech
3
Revision: 1
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