欢迎访问ic37.com |
会员登录 免费注册
发布采购

V23990-P588-A41-PM 参数 Datasheet PDF下载

V23990-P588-A41-PM图片预览
型号: V23990-P588-A41-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 22 页 / 626 K
品牌: VINCOTECH [ VINCOTECH ]
 浏览型号V23990-P588-A41-PM的Datasheet PDF文件第2页浏览型号V23990-P588-A41-PM的Datasheet PDF文件第3页浏览型号V23990-P588-A41-PM的Datasheet PDF文件第4页浏览型号V23990-P588-A41-PM的Datasheet PDF文件第5页浏览型号V23990-P588-A41-PM的Datasheet PDF文件第6页浏览型号V23990-P588-A41-PM的Datasheet PDF文件第7页浏览型号V23990-P588-A41-PM的Datasheet PDF文件第8页浏览型号V23990-P588-A41-PM的Datasheet PDF文件第9页  
V23990-P588-A41-PM
preliminary datasheet
flowPIM 1 3rd gen
Features
3~ rectifier, BRC, Inverter, NTC
Very compact housing, easy to route
IGBT4 / EmCon4 technology for low saturation losses
and improved EMC behaviour
1200V / 15A
flowPIM1 housing
Target Applications
Motor Drives
Power Generation
Schematic
Types
V23990-P588-A41-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Peak repetitive reverse voltage
DC forward current
Surge forward current
I t-value
Power dissipation per diode
Maximum junction temperature
2
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
2
1600
T
j
=T
j
max
T
h
=80°C
36
320
T
j
=45°C
510
40
150
V
A
A
A
2
s
W
°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum junction temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
20
45
57
±20
10
800
175
V
A
A
W
V
μs
V
°C
copyright Vincotech
1
Revision: 1