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V23990-P588-A41-PM 参数 Datasheet PDF下载

V23990-P588-A41-PM图片预览
型号: V23990-P588-A41-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 22 页 / 626 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P588-A41-PM  
preliminary datasheet  
Output Inverter  
Figure 13  
Output inverter FRED  
Figure 14  
Output inverter FRED  
Typical reverse recovery charge as a  
function of collector current  
Typical reverse recovery charge as a  
function of IGBT turn on gate resistor  
Q
rr = f(IC)  
Qrr = f(Rgon)  
4
4
Qrr  
Tj = Tjmax -25°C  
Tj = Tjmax -25°C  
3.2  
2.4  
1.6  
0.8  
0
3.2  
2.4  
1.6  
0.8  
Qrr  
Qrr  
Tj = 25°C  
Tj = 25°C  
Qrr  
0
0
I C (A)  
R g on ( Ω)  
0
5
10  
15  
20  
25  
30  
30  
60  
90  
120  
150  
At  
At  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
25/150  
600  
°C  
V
25/150  
600  
°C  
V
=
=
±15  
V
15  
A
Rgon  
=
VGE =  
32  
±15  
V
Figure 15  
Output inverter FRED  
Figure 16  
Output inverter FRED  
Typical reverse recovery current as a  
function of collector current  
Typical reverse recovery current as a  
function of IGBT turn on gate resistor  
IRRM = f(IC)  
IRRM = f(Rgon)  
70  
40  
32  
24  
16  
8
60  
50  
40  
30  
20  
10  
IRRM  
IRRM  
Tj = Tjmax -25°C  
Tj = 25°C  
IRRM  
Tj = Tjmax - 25°C  
IRRM  
Tj = 25°C  
0
0
0
I C (A)  
R gon ( Ω )  
150  
30  
60  
90  
120  
0
5
10  
15  
20  
25  
30  
At  
At  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
25/150  
600  
°C  
25/150  
600  
°C  
V
=
=
V
V
±15  
15  
A
Rgon  
=
VGE =  
32  
±15  
V
copyright Vincotech  
8
Revision: 1