V23990-P588-A41-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak repetitive reverse voltage
DC forward current
Repetitive peak forward current
Power dissipation per diode
Maximum junction temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
21
30
44
175
V
A
A
W
°C
Brc Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum junction temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
10
24
43
±20
10
800
175
V
A
A
W
V
μs
V
°C
Brc Diode
Peak repetitive reverse voltage
DC forward current
Repetitive peak forward current
Power dissipation per diode
Maximum junction temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
10
20
29
175
V
A
A
W
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12.7
min 12.7
V
mm
mm
copyright Vincotech
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Revision: 1
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