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V23990-P588-A41-PM 参数 Datasheet PDF下载

V23990-P588-A41-PM图片预览
型号: V23990-P588-A41-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 22 页 / 626 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P588-A41-PM
preliminary datasheet
Output Inverter
Figure 9
Typical switching times as a
function of collector current
t = f(I
C
)
1
t (
μ
s)
t (
μ
s)
Output inverter IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R
G
)
1
Output inverter IGBT
t
doff
t
don
t
doff
t
f
0.1
0.1
t
f
t
don
t
r
t
r
0.01
0.01
0.001
0
5
10
15
20
25
I
C
(A)
30
0.001
0
20
40
60
80
100
120
R
G
(
Ω
)
140
With an inductive load at
T
j
=
150
°C
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
32
R
goff
=
32
With an inductive load at
T
j
=
150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
15
A
Figure 11
Typical reverse recovery time as a
function of collector current
t
rr
= f(Ic)
0.5
t
rr
(
μ
s)
Output inverter FRED
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t
rr
= f(R
gon
)
1
t
rr
(
μ
s)
Output inverter FRED
t
rr
0.8
0.4
t
rr
T
j
= T
jmax
-25°C
T
j
= T
jmax
-25°C
0.3
0.6
t
rr
T
j
= 25°C
0.2
0.4
t
rr
T
j
= 25°C
0.1
0.2
0
0
5
10
15
20
25
I
C
(A)
30
0
0
30
60
90
120
R
g on
(
Ω
)
150
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
600
±15
32
°C
V
V
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
600
15
±15
°C
V
A
V
copyright Vincotech
7
Revision: 1