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V23990-P588-A41-PM 参数 Datasheet PDF下载

V23990-P588-A41-PM图片预览
型号: V23990-P588-A41-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 22 页 / 626 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P588-A41-PM  
preliminary datasheet  
Output Inverter  
Figure 5  
Output inverter IGBT  
Figure 6  
Output inverter IGBT  
Typical switching energy losses  
as a function of collector current  
E = f(IC)  
Typical switching energy losses  
as a function of gate resistor  
E = f(RG)  
3.5  
3.5  
Eon  
3
3
Eon  
Eoff  
2.5  
2
2.5  
Eon  
Tj = Tjmax - 25°C  
Tj = Tjmax - 25°C  
2
1.5  
1
Tj = 25°C  
Eoff  
Eon  
Eoff  
1.5  
1
Eoff  
0.5  
0
0.5  
0
Tj = 25°C  
R G( Ω )  
140  
I
C (A)  
0
5
10  
15  
20  
25  
30  
0
20  
40  
60  
80  
100  
120  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
°C  
V
°C  
V
25/150  
25/150  
VCE  
VGE  
=
=
VCE  
VGE  
IC =  
=
=
600  
±15  
32  
600  
±15  
15  
V
V
Rgon  
Rgoff  
=
=
A
32  
Figure 7  
Output inverter IGBT  
Figure 8  
Output inverter IGBT  
Typical reverse recovery energy loss  
as a function of collector current  
Typical reverse recovery energy loss  
as a function of gate resistor  
Erec = f(RG)  
Erec = f(Ic)  
2
2
1.6  
1.2  
0.8  
0.4  
1.6  
Erec  
Tj = Tjmax -25°C  
Tj = Tjmax -25°C  
1.2  
0.8  
0.4  
0
Erec  
Erec  
Tj = 25°C  
Tj = 25°C  
Erec  
0
0
I C (A)  
R G ( Ω )  
5
10  
15  
20  
25  
30  
0
30  
60  
90  
120  
150  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
25/150  
600  
°C  
25/150  
600  
°C  
V
=
=
=
=
V
V
±15  
±15  
V
Rgon  
=
32  
15  
A
copyright Vincotech  
6
Revision: 1