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V23990-K209-A-/1A/-PM 参数 Datasheet PDF下载

V23990-K209-A-/1A/-PM图片预览
型号: V23990-K209-A-/1A/-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel]
分类和应用: 局域网功率控制晶体管
文件页数/大小: 17 页 / 2488 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K209-A-PM  
datasheet  
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7  
Figure 9  
IGBT  
Figure 10  
IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1
1
tdoff  
tdoff  
tf  
tf  
tdon  
tr  
0,1  
0,1  
tdon  
tr  
0,01  
0,01  
0,001  
0,001  
I C (A)  
R G ( )  
200  
0
2
4
6
8
10  
12  
14  
16  
0
40  
80  
120  
160  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
125  
600  
±15  
81  
°C  
V
125  
600  
±15  
8
°C  
V
V
A
=
=
=
=
V
Rgon  
Rgoff  
=
=
81  
Figure 11  
FWD  
Figure 12  
FWD  
Typical reverse recovery time as a  
function of collector current  
trr = f(IC)  
Typical reverse recovery time as a  
function of IGBT turn on gate resistor  
trr = f(Rgon  
)
0,8  
0,6  
0,4  
0,2  
0
0,8  
trr  
Tj = Tjmax -25°C  
trr  
Tj = Tjmax -25°C  
0,6  
0,4  
0,2  
trr  
trr  
Tj = 25°C  
Tj = 25°C  
0
0
40  
80  
120  
160  
200  
I C (A)  
R g on  
(
)
0
4
8
12  
16  
At  
At  
Tj =  
VCE  
VGE  
Tj =  
°C  
V
°C  
V
A
V
25/125  
600  
25/125  
600  
8
=
=
VR =  
IF =  
±15  
V
Rgon  
=
VGE =  
81  
±15  
copyright Vincotech  
6
Revision: 3