V23990-K209-A-PM
datasheet
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
2
E (mWs)
E (mWs)
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
1,5
IGBT
E
on High T
E
on High T
1,2
1,6
E
off High T
1,2
E
on Low T
0,9
E
on Low T
E
off Low T
E
off High T
0,8
0,6
E
off Low T
0,4
0,3
0
0
3
6
9
12
I
C
(A)
15
0
0
40
80
120
160
R
G
(
Ω
)
200
With an inductive load at
T
j
=
°C
25/125
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
81
R
goff
=
81
With an inductive load at
T
j
=
°C
25/125
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
8
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
E (mWs)
1
IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
0,8
E (mWs)
IGBT
E
rec
T
j
= T
jmax
-25°
C
E
rec
0,8
T
j
= T
jmax
-25°
C
E
rec
0,6
0,6
T
j
= 25°
C
T
j
= 25°
C
E
rec
0,4
0,4
0,2
0,2
0
0
3
6
9
12
I
C
(A)
15
0
0
40
80
120
160
R
G
(
Ω
)
200
With an inductive load at
T
j
=
°C
25/125
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
81
With an inductive load at
T
j
=
25/125
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
8
A
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5
Revision: 3
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