V23990-K209-A-PM
datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
=1 W/mK
1500
25
25
25
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,51
1,42
0,86
0,79
0,03
0,03
0,05
V
V
mA
Thermal resistance chip to heatsink
R
thJH
1,5
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
=1 W/mK
±15
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=54
Rgon=54
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
V
CE
=V
GE
15
0
20
1200
0
0,00015
8
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1,1
5,8
1,75
1,85
5,6
1,9
0,03
300
V
V
mA
nA
-
46
44
21
27
317
385
96
174
0,65
0,82
0,54
0,82
ns
±15
600
8
mWs
551
40
17
58
nC
pF
Thermal resistance chip to heatsink
R
thJH
1,5
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
5
diF/dt=tbd A/us
0
600
8
Erec
Thermal grease
thickness≤50um
λ
=1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,55
1,57
7,8
8,8
434
610
1,16
1,77
75
38
0,48
0,75
1,77
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink
R
thJH
2,5
K/W
PTC
Rated resistance
Deviation of R100
R100
A-value
B-value
Vincotech NTC Reference
R
∆R/R
R
B(25/50) Tol. %
B(25/100) Tol. %
R100=1670
T=25°
C
T=100°
C
T=100°
C
T=25°
C
T=25°
C
-3
1670,313
7,635*10-3
1,731*10-5
E
1/K
1/K²
1000
3
%
copyright Vincotech
3
Revision: 3
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