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V23990-K209-A-/1A/-PM 参数 Datasheet PDF下载

V23990-K209-A-/1A/-PM图片预览
型号: V23990-K209-A-/1A/-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES, N-Channel]
分类和应用: 局域网功率控制晶体管
文件页数/大小: 17 页 / 2488 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-K209-A-PM
datasheet
MiniSKiiP® 1 PIM
Features
Solderless interconnection
Trench Fieldstop IGBT3 technology
1200V / 8A
MiniSKiiP
®
1 housing
Target Applications
Industrial drives
Schematic
Types
V23990-K209-A-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
Surge forward current
I t-value
Power dissipation
Maximum Junction Temperature
2
V
RRM
I
FAV
I
FSM
It
P
tot
T
j
max
2
1600
T
j
=T
j
max
T
h
=80°
C
29
220
T
j
=25°
C
240
T
h
=80°
C
46
150
V
A
A
A
2
s
W
°
C
t
p
=10ms
half sine wave
T
j
=T
j
max
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
h
=80°
C
1200
18
24
62
±20
10
900
175
V
A
A
W
V
µs
V
C
°
copyright Vincotech
1
Revision: 3