10-FU094PB017ME02-L620F36
datasheet
H-Bridge Switching Characteristics
figure 16.
MOSFET
figure 17.
MOSFET
Typical recovered charge as a function of drain current
Typical recovered charge as a function of turn off gate resistor
Qr = f(ID)
Qr = f(Rgoff)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
ID(A)
0
1
2
3
4
5
6
7
8
9
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
2
V
V
Ω
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
-5/15
60
Tj:
Tj:
Rgon
figure 18.
MOSFET
figure 19.
MOSFET
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(ID)
IRM = f(Rgoff)
175
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
ID(A)
0
1
2
3
4
5
6
7
8
R
9
goff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
V
V
Ω
At
600
V
V
A
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
-5/15
2
-5/15
60
Tj:
Tj:
Rgon
Copyright Vincotech
11
03 Aug. 2021 / Revision 1
VINCOTECH [ VINCOTECH ]
