10-FU094PB017ME02-L620F36
datasheet
H-Bridge Switching Characteristics
figure 20.
MOSFET
figure 21.
MOSFET
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgoff)
60000
40000
35000
30000
25000
20000
15000
10000
5000
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
50000
40000
30000
20000
10000
0
0
0
25
50
75
100
125
ID(A)
0
1
2
3
4
5
6
7
8
9
Rgoff(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
600
-5/15
2
V
V
Ω
At
600
-5/15
60
V
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
V
A
Tj:
Tj:
Rgon
figure 22.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
150
ID MAX
125
100
75
50
25
0
0
200
400
600
800
1000
V
DS(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
12
03 Aug. 2021 / Revision 1
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