T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32V, 25mA, Pulsed signal with 100uS pulse width and 20% duty cycle. 3dB compression reference at Pin_ref.
2. See page 18 for load pull and source pull reference planes.
1GHz, Load-pull
Max Power is 37.7dBm
at Z = 57.838+20.992i
Zs(fo) = 50.64-2.83i
Zs(2fo) = 41.05-8.09i
Ω
Ω
Ω
= 0.1065+0.1739i
Max Gain is 14.6dB
1
at Z = 70.595+66.488i
. Ω
Γ
Zs(3fo) = 27.65-17.19i
Zl(2fo) = 39.13+10.91i
Ω
Ω
Zl(3fo) = 84.9-32.33i
Ω
8
= 0.3641+0.3506i
Max PAE is 77.3%
Γ
at Z = 52.124+93.556i
= 0.4676+0.4877i
Ω
Γ
75.3
14.5
14
13.5
72.3
69.3
37.6
37
37.3
Power
Gain
PAE
Zo = 50
Pin_ref = 8.2dBm
Ω
Datasheet: Rev 001- 06-13-14
© 2014 TriQuint
Disclaimer: Subject to change without notice
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