T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
RF Characterization – Load Pull Performance at 2.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol Parameter
GLIN
Min
Typical
17.3
Max
Units
dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
P3dB
6.5
W
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
PAE3dB
G3dB
68.3
14.3
%
Gain at 3 dB Compression, Power Tuned
dB
RF Characterization – Load Pull Performance at 3.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol Parameter
GLIN
Min
Typical
15.7
Max
Units
dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
P3dB
5.7
W
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
PAE3dB
G3dB
64.7
12.7
%
Gain at 3 dB Compression, Power Tuned
dB
RF Characterization – Load Pull Performance at 3.5 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol Parameter
GLIN
Min
Typical
14.3
Max
Units
dB
Linear Gain, Power Tuned
Output Power at 3 dB Gain Compression, Power
Tuned
P3dB
5
W
Power-Added Efficiency at 3 dB Gain
Compression, Efficiency Tuned
PAE3dB
G3dB
54.9
11.3
%
Gain at 3 dB Compression, Power Tuned
dB
Datasheet: Rev 001- 06-13-14
Disclaimer: Subject to change without notice
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