T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32V, 25mA, Pulsed signal with 100uS pulse width and 20% duty cycle. 3dB compression reference at Pin_ref.
2. See page 18 for load pull and source pull reference planes.
3GHz, Load-pull
Max Power is 37.6dBm
at Z = 41.288+18.488i
Zs(fo) = 51.07-1.59i
Zs(2fo) = 13.41-4.88i
Ω
Ω
Ω
= -0.0523+0.2131i
1
Γ
Zs(3fo) = 0
6
Ω
.
0
Max Gain is6 13.6dB
at Z = 17.228+27.075i
.
Zl(2fo) = 18.54-23.81i
Ω
Ω
Zl(3fo) = 0
Ω
= -0.2799+0.5155i
Max PAE is 64.7%
Γ
at Z = 29.369+44.144i
= 0.0377+0.5352i
Ω
Γ
63.2
13.4
36.7
60.2
57.2
12.9
12.4
37.3
37
Power
Gain
PAE
Zo = 50
Pin_ref = 7.3dBm
Ω
Datasheet: Rev 001- 06-13-14
© 2014 TriQuint
Disclaimer: Subject to change without notice
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