T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
RF Characterization – EVB Performance at 3.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA, Pulse: 100uS Pulse Width, 20% Duty Cycle
Symbol Parameter
Linear Gain
Min
Typical
15.8
Max
Units
dB
GLIN
P3dB
Output Power at 3 dB Gain Compression
Drain Efficiency at 3 dB Gain Compression
Gain at 3 dB Compression
4.38
W
DE3dB
G3dB
48.9
%
12.8
dB
RF Characterization – Mismatch Ruggedness at 3.0 GHz
Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 25 mA
Driving input power is determined at 1dB CW compression under matched condition at EVB output connector.
Symbol Parameter
VSWR Impedance Mismatch Ruggedness
Typical
10:1
Datasheet: Rev 001- 06-13-14
Disclaimer: Subject to change without notice
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