Zs(3fo) = 0
Zl(2fo) = 32.86-40.89i
Zl(3fo) = 0
Γ
1
T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Load Pull Smith Charts (1, 2)
RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the
impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances
listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. 32V, 25mA, Pulsed signal with 100uS pulse width and 20% duty cycle. 3dB compression reference at Pin_ref.
2. See page 18 for load pull and source pull reference planes.
3.5GHz, Load-pull
.
0
9
Max Power is 37dBm
Zs(fo) = 48.9-0.78i
Zs(2fo) = 34.82+0.02i
Ω
0
.
.
4
at Z = 38.189+19.398i
7
Ω
Ω
1
= -0.0816+0.2379i
Ω
.
6
Max Gain is 11.8dB
at Z = 20.13+24.933i
= -0.2659+0.4501i
Ω
Ω
Ω
Γ
Max PAE is 54.9%
at Z = 26.394+33.042i
= -0.1027+0.4769i
Ω
Γ
11.2
52.6
10.7
11.7
49.6
46.6
36.4
36.7
37
Power
Gain
PAE
Zo = 50
Pin_ref = 3.6dBm
Ω
Datasheet: Rev 001- 06-13-14
© 2014 TriQuint
Disclaimer: Subject to change without notice
- 11 of 21 -
www.triquint.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
