T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Thermal and Reliability Information(1)
Parameter
Test Conditions
Value
5.60
Units
ºC/W
°C
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
Vds = 32V, Idq = 25mA
85 °C Case
1.25 W Pdiss, 100uS PW, 20%
92
5.0E12
5.60
Hrs
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
ºC/W
°C
Vds = 32V, Idq = 25mA
85 °C Case
2.50 W Pdiss, 100uS PW, 20%
99
1.7E12
5.33
Hrs
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
ºC/W
°C
Vds = 32V, Idq = 25mA
85 °C Case
3.75 W Pdiss, 100uS PW, 20%
105
7.3E11
5.40
Hrs
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
ºC/W
°C
Vds = 32V, Idq = 25mA
85 °C Case
5 W Pdiss, 100uS PW, 20%
112
2.8E11
5.44
Hrs
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
ºC/W
°C
Vds = 32V, Idq = 25mA
85 °C Case
6.25 W Pdiss, 100uS PW, 20%
119
1.1E11
18.4
Hrs
Thermal Resistance (θJC)
Channel Temperature (TCH)
Median Lifetime (TM)
ºC/W
°C
Vds = 32V, Idq = 25mA
85 °C Case
5 W Pdiss, CW
177
1.4E08
Hrs
Notes:
1. Thermal resistance measured to bottom of package.
Datasheet: Rev 001- 06-13-14
Disclaimer: Subject to change without notice
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