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T1G3000532-SMEVB 参数 Datasheet PDF下载

T1G3000532-SMEVB图片预览
型号: T1G3000532-SMEVB
PDF下载: 下载PDF文件 查看货源
内容描述: [5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor]
分类和应用:
文件页数/大小: 21 页 / 1683 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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T1G3000532-SM  
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor  
Evaluation Board Performance Over Temperature (1, 2)  
Performance measured on TriQuint’s 0.5 GHz to 3 GHz Evaluation Board  
P3dB vs. Frequency vs. Temperature  
6.0  
G3dB vs. Frequency vs. Temperature  
16.0  
-40°C  
-20°C  
0°C  
15.5  
15.0  
14.5  
14.0  
13.5  
13.0  
12.5  
12.0  
11.5  
11.0  
5.5  
5.0  
4.5  
4.0  
3.5  
25°C  
45°C  
65°C  
85°C  
-40°C  
-20°C  
0°C  
25°C  
45°C  
65°C  
85°C  
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0  
Frequency [GHz]  
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0  
Frequency [GHz]  
PAE3dB vs. Frequency vs. Temperature  
70  
65  
60  
55  
50  
45  
40  
35  
30  
-40°C  
-20°C  
0°C  
25°C  
45°C  
65°C  
85°C  
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0  
Frequency [GHz]  
Notes:  
1. Test Conditions: VDS = 32 V, IDQ = 25 mA  
2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20%  
Datasheet: Rev 001- 06-13-14  
Disclaimer: Subject to change without notice  
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© 2014 TriQuint  
www.triquint.com  
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