T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Application Circuit
Bias-down Procedure
Bias-up Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 32 V
Turn off RF signal
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Slowly increase VG until quiescent ID is 25 mA.
Apply RF signal
Turn off VG
Datasheet: Rev 001- 06-13-14
Disclaimer: Subject to change without notice
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