T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Typical Performance – Efficiency Tuned(1,2,3)
Notes:
4. Pulsed signal with 100uS pulse width and 20% duty cycle
5. See page 18 for load pull and source pull reference planes.
6. Performance is measured at device reference planes.
T1G3000532-SM Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =25mA, 100uS, 20%, Efficiency Tuned
T1G3000532-SM Gain and PAE vs. Output Power
1.5GHz, Vds =32V, Idq =25mA, 100uS, 20%, Efficiency Tuned
20
19
18
17
16
15
14
13
12
11
10
100
92
84
76
68
60
52
44
36
28
20
19
18.5
18
75
70
65
60
55
50
45
40
35
30
25
17.5
17
Zs = 50.3+j0.87Ω
Zl = 51.2+j61.2Ω
Zs = 50.6-j2.83Ω
Zl = 52.1+j93.6Ω
16.5
16
Gain
PAE
15.5
15
Gain
PAE
14.5
14
27
25
26
27
28
29
30
31
32
33
34
35
28
29
30
31
32
33
34
35
36
37
Output Power [dBm]
Output Power [dBm]
T1G3000532-SM Gain and PAE vs. Output Power
2GHz, Vds =32V, Idq =25mA, 100uS, 20%, Efficiency Tuned
T1G3000532-SM Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =25mA, 100uS, 20%, Efficiency Tuned
18
17.5
17
70
65
60
55
50
45
40
35
30
25
20
17
16.5
16
80
72
64
56
48
40
32
24
16
8
16.5
16
15.5
15
Zs = 51.8-j0.59
Zl = 58.4+j57.7
Ω
Ω
Zs = 51.1-j1.59Ω
Zl = 29.4+j44.1Ω
15.5
15
14.5
14
Gain
PAE
Gain
PAE
14.5
14
13.5
13
13.5
12.5
13
27
12
22
0
28
29
30
31
32
33
34
35
36
37
38
24
26
28
30
32
34
36
Output Power [dBm]
Output Power [dBm]
T1G3000532-SM Gain and PAE vs. Output Power
3.5GHz, Vds =32V, Idq =25mA, 100uS, 20%, Efficiency Tuned
15
80
72
64
56
48
40
32
24
16
8
14.5
14
13.5
13
Zs = 48.9-j0.78Ω
Zl = 26.4+j33.0Ω
12.5
12
11.5
11
Gain
PAE
10.5
10
17
0
37
19
21
23
25
27
29
31
33
35
Output Power [dBm]
Datasheet: Rev 001- 06-13-14
Disclaimer: Subject to change without notice
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