Zs = 50.3+j0.87
Ω
Zl = 53.8+j36.1
Ω
Zs = 51.8-j0.59
Ω
Zl = 54.5+j21.4
Ω
Zs = 51.1-j1.59
Zl = 41.3+j18.5
Ω
Ω
Zs = 48.9-j0.78
Ω
Zl = 38.2+j19.4
Ω
T1G3000532-SM
5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor
Typical Performance – Power Tuned(1,2,3)
Notes:
1. Pulsed signal with 100uS pulse width and 20% duty cycle
2. See page 18 for load pull and source pull reference planes.
3. Performance is measured at device reference planes.
T1G3000532-SM Gain and PAE vs. Output Power
1.5GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
T1G3000532-SM Gain and PAE vs. Output Power
1GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
20
19
18
17
16
15
14
13
12
11
10
70
65
60
55
50
45
40
35
30
25
20
20
19
18
17
16
15
14
13
12
11
10
80
72
64
56
48
40
32
24
16
8
Zs = 50.6-j2.83Ω
Zl = 57.8+j21.0Ω
Gain
PAE
Gain
PAE
0
38
26
28
30
32
34
36
38
24
26
28
30
32
34
36
Output Power [dBm]
Output Power [dBm]
T1G3000532-SM Gain and PAE vs. Output Power
2GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
T1G3000532-SM Gain and PAE vs. Output Power
3GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
18
17.5
17
60
55
50
45
40
35
30
25
20
15
10
17
16.5
16
60
55
50
45
40
35
30
25
20
15
10
16.5
16
15.5
15
15.5
15
14.5
14
Gain
PAE
14.5
14
Gain
PAE
13.5
13
13.5
13
12.5
12
26
28
30
32
34
36
38
40
22
24
26
28
30
32
34
36
38
Output Power [dBm]
Output Power [dBm]
T1G3000532-SM Gain and PAE vs. Output Power
3.5GHz, Vds =32V, Idq =25mA, 100uS, 20%, Power Tuned
15
50
14.5
14
45
40
35
30
25
20
15
10
5
13.5
13
12.5
12
Gain
PAE
11.5
11
10.5
10
17
0
19
21
23
25
27
29
31
33
35
37
Output Power [dBm]
Datasheet: Rev 001- 06-13-14
Disclaimer: Subject to change without notice
- 12 of 21 -
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