QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 65 V, IDQ = 240 mA, Pulsed signal with 100 us pulse width and 10 % duty cycle.
2. See page 20 for load pull and source pull reference planes.
2.7GHz, Load-pull
Zs(fo) = 2.52-8.65i
Zs(2fo) = 23.69+10.28i
Max Power is 52.1dBm
Zs(3fo) = 19.57+4.39i
Zl(2fo) = 5.27-8.7i
Zl(3fo) = NaN
at Z = 4.216-6.269i
= -0.1778-0.5194i
Max Gain is 14.2dB
at Z = 2.248-2.733i
= -0.5555-0.3471i
Max PAE is 52.3%
at Z = 2.397-3.568i
= -0.4898-0.4288i
51
51.2
51.4
51.6
51.8
14
52
50.6
13.5
48.6
46.6
44.6
42.6
40.6
13
12.5
Power
Gain
12
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
