QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
Typical Performance – Load Pull Drive-up
Notes:
1. Pulsed signal with 100 us pulse width and 10 % duty cycle, Vd = 65 V, IDQ = 240 mA
2. See page 20 for load pull and source pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
2.3 GHz - Power Tuned
Gain and PAE vs. Output Power
2.3 GHz - Efficiency Tuned
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs-fo = 2.54-8.65i
Zs-2fo = 23.67+10.31i
Zs-3fo = 16.2-12.59i
Zl-fo = 2.749-1.087i
Zl-2fo = 3.77-7.53i
Zl-3fo = NaN
Zs-fo = 2.54-8.65i
Zs-2fo = 23.67+10.31i
Zs-3fo = 16.2-12.59i
Zl-fo = 4.171-3.096i
Zl-2fo = 3.77-7.53i
Zl-3fo = NaN
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
Output Power [dBm]
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
Output Power [dBm]
Gain and PAE vs. Output Power
2.7 GHz - Power Tuned
Gain and PAE vs. Output Power
2.7 GHz - Efficiency Tuned
20
100
20
100
Zs-fo = 2.52-8.65i
Zs-2fo = 23.69+10.28i
Zs-3fo = 19.57+4.39i
Zl-fo = 2.397-3.568i
Zl-2fo = 5.27-8.7i
Zl-3fo = NaN
Gain
PAE
Gain
PAE
Zs-fo = 2.52-8.65i
Zs-2fo = 23.69+10.28i
Zs-3fo = 19.57+4.39i
Zl-fo = 4.216-6.269i
Zl-2fo = 5.27-8.7i
Zl-3fo = NaN
19
18
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
0
19
18
17
16
15
14
13
12
11
10
90
80
70
60
50
40
30
20
10
0
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
Output Power [dBm]
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
Output Power [dBm]
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
