QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 65 V, IDQ = 240 mA, Pulsed signal with 100 us pulse width and 10 % duty cycle.
2. See page 20 for load pull and source pull reference planes.
1.8GHz, Load-pull
Zs(fo) = 1.51-4.57i
Zs(2fo) = 8.83-18i
Zs(3fo) = 5.12-14.19i
Zl(2fo) = 2.18-1.76i
Zl(3fo) = NaN
Max Power is 52.5dBm
at Z = 4.981-1.73i
= -0.3174-0.1521i
Max Gain is 19dB
at Z = 3.206+2.98i
= -0.4411+0.3252i
Max PAE is 64.8%
at Z = 3.417+1.789i
= -0.4646+0.1953i
18.7
51.5
51.7
51.9
64.3
18.2
62.3
52.1
60.3
52.3
17.7
58.3
56.3
54.3
52.5
17.2
16.7
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
- 10 of 25 -
© 2017 Qorvo
www.qorvo.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
