QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 65 V, IDQ = 240 mA, Pulsed signal with 100 us pulse width and 10 % duty cycle.
2. See page 20 for load pull and source pull reference planes.
1.5GHz, Load-pull
Zs(fo) = 1.57-2.55i
Zs(2fo) = 6.9-13.31i
Zs(3fo) = 1.75-1.83i
Zl(2fo) = 1.38+1.68i
Zl(3fo) = NaN
Max Power is 52.5dBm
at Z = 5.674+0.03i
= -0.276+0.0024i
Max Gain is 20.8dB
at Z = 2.808+4.206i
= -0.4095+0.4629i
Max PAE is 69.4%
at Z = 3.515+4.24i
= -0.3472+0.4227i
20.7
69.1
20.2
51.7
51.9
67.1
65.1
52.1
19.7
19.2
63.1
52.3
61.1
59.1
52.5
57.1
18.7
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
