QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 65 V, IDQ = 240 mA, Pulsed signal with 100 us pulse width and 10 % duty cycle.
2. See page 20 for load pull and source pull reference planes.
2.3GHz, Load-pull
Zs(fo) = 2.54-8.65i
Zs(2fo) = 23.67+10.31i
Max Power is 52.3dBm
at Z = 4.171-3.096i
= -0.347-0.2943i
Max Gain is 16.6dB
at Z = 2.579-0.122i
= -0.5898-0.0154i
Max PAE is 57.6%
at Z = 2.749-1.087i
= -0.5574-0.1328i
Zs(3fo) = 16.2-12.59i
Zl(2fo) = 3.77-7.53i
Zl(3fo) = NaN
16.5
51.1
51.3
51.5
51.7
16
57.1
51.9
55.1
52.1
15.5
53.1
51.1
49.1
15
14.5
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
