QPD1013
150W, 65V, DC – 2.7 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 65 V, IDQ = 240 mA, Pulsed signal with 100 us pulse width and 10 % duty cycle.
2. See page 20 for load pull and source pull reference planes.
1.2GHz, Load-pull
Zs(fo) = 1.88-1.36i
Zs(2fo) = 17.62-26.72i
Zs(3fo) = 1.69-6.56i
Zl(2fo) = 1.63+3.48i
Zl(3fo) = NaN
Max Power is 52.7dBm
at Z = 7.642+0.908i
= -0.1306+0.0582i
Max Gain is 22.5dB
at Z = 4.378+6.184i
= -0.1739+0.5049i
Max PAE is 70.9%
at Z = 5.263+6.184i
= -0.1256+0.456i
22.3
69.2
21.8
51.8
52
67.2
52.2
21.3
65.2
63.2
61.2
52.4
52.6
20.8
20.3
Power
Gain
PAE
Zo = 10
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
