欢迎访问ic37.com |
会员登录 免费注册
发布采购

TMC6200 参数 Datasheet PDF下载

TMC6200图片预览
型号: TMC6200
PDF下载: 下载PDF文件 查看货源
内容描述: [Universal high voltage BLDC/PMSM/Servo MOSFET 3-halfbridge gate-driver with in line motor current sensing.]
分类和应用:
文件页数/大小: 44 页 / 1548 K
品牌: TRINAMIC [ TRINAMIC MOTION CONTROL GMBH & CO. KG. ]
 浏览型号TMC6200的Datasheet PDF文件第8页浏览型号TMC6200的Datasheet PDF文件第9页浏览型号TMC6200的Datasheet PDF文件第10页浏览型号TMC6200的Datasheet PDF文件第11页浏览型号TMC6200的Datasheet PDF文件第13页浏览型号TMC6200的Datasheet PDF文件第14页浏览型号TMC6200的Datasheet PDF文件第15页浏览型号TMC6200的Datasheet PDF文件第16页  
TMC6200 DATASHEET (Rev. 1.01 / 2018-NOV-15)  
12  
3.3 MOSFETs and Slope Control  
The selection of power MOSFETs depends on a number of factors, like package size, on-resistance,  
voltage rating and supplier. It is not true, that larger, lower RDSon MOSFETs will always be better, as  
a larger device also has higher capacitances and may add more ringing in trace inductance and power  
dissipation in the gate drive circuitry. Adapt the MOSFETs to the required motor voltage (adding 5-10V  
of reserve to the peak supply voltage) and to the desired maximum current, in a way that resistive  
power dissipation still is low for the chosen MOSFET package. The TMC6200 drives the MOSFET gates  
with roughly 10V, so normal, 10V specified types are sufficient. Logic level FETs (4.5V specified RDSon)  
will also work but may be more critical with regard to bridge cross-conduction due to lower VGS(th)  
.
The gate drive current and MOSFET gate resistors RG (optional) should basically be adapted to the  
MOSFET gate-drain charge (Miller charge) in order to yield reasonable slope times. Figure 3.3 shows  
the influence of the Miller charge on the switching event. Figure 3.4 additionally shows the switching  
events in different load situations (load pulling the output up or down), and the required bridge  
brake-before-make time.  
The following table shall serve as a thumb rule for programming the MOSFET driver current  
(DRVSTRENGTH setting) and the selection of gate resistors:  
MOSFET MILLER CHARGE VS. DRVSTRENGTH AND RG  
Miller Charge  
[nC] (typ.)  
<10  
DRVSTRENGTH  
setting  
0 or 1  
Value of RG [Ω]  
≤ 10 (recommended)  
≤ 5 (optional)  
10…20  
0 to 2  
20…80  
>80  
1 to 3  
3
2.5 (optional)  
1 (optional)  
The TMC6200 provides increased gate-off drive current to avoid bridge cross-conduction induced by  
high dV/dt. This protection will be less efficient with gate resistors exceeding the values given in the  
table. For larger values of RG, a parallel diode may be required to ensure keeping the MOSFET safely  
off during switching events of the opposite MOSFET.  
MOSFET gate charge vs. switching event  
10  
8
25  
VM  
20  
15  
10  
5
6
4
2
0
0
25  
0
5
10  
QMILLER  
15  
20  
QG Total gate charge (nC)  
Figure 3.3 Miller charge determines switching slope  
Hints  
-
-
Choose modern MOSFETs with fast and soft recovery bulk diode and low reverse recovery charge.  
A small, SMD MOSFET package allows compacter routing and reduces parasitic inductance effects.  
www.trinamic.com  
 
 
 复制成功!