TE
tmCH
T436416A
Read & Write Cycle at Different Bank @ Burst Length = 4
0
1
2
3
4
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
C L O C K
H IG H
C K E
C S
R A S
C A S
R A a
C A a
R B b
C B b
R A c
C A c
A D D R
B A
R A a
R B b
Q A a 1
Q A a 0
R A c
D B b 1
D B b 1
A 1 0 /A P
* N o te 1
tC
D L
Q A a 0
Q A a 2
Q A a 3
D B b 0
D B b 2
D B b 3
Q A c 0
Q A c 1
Q A c 2
C L = 2
D Q
Q A a 1
Q A a 2
Q A a 3
D B b 0
D B b 2
D B b 3
Q A c 0
Q A c 1
C L = 3
W E
D Q M
R o w A c tiv e
( A - B a n k )
R e a d ( A -
B a n k )
R o w A c tiv e
( B - B a n k )
P r e c h a r g e
( A - B a n k )
W
rite ( B -
B a n k )
R e a d ( A -
B a n k )
R o w A c tiv e
( A - B a n k )
:D o n 't c a re
*Note : 1. tCDL should be met to complete write.
TM Technology Inc. reserves the right
to change products or specifications without notice.
P.20
Publication Date: MAY. 2003
Revision: B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
