UCC28070-Q1
SLUSA71A –JULY 2010–REVISED JUNE 2011
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range −40°C < TA < 125°C, VCC = 12 V, GND = 0 V, RRT = 75 kΩ,
RDMX = 68.1 kΩ, RRDM = RSYN = 100 kΩ, CCDR = 2.2 nF, CSS = CVREF = 0.1 µF, CVCC = 1 µF, IVREF = 0 mA (unless otherwise
noted)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Current Synthesizer
VSENSE = 3 V, VINAC = 0 V
2.91
0.10
3
0.15
5
3.09
VRSYNTH
Regulation voltage
VSENSE = 3 V, VINAC = 2.85 V
Measured at RSYNTH (rising)
0.20
5.25
V
Synthesizer disable threshold
VINAC input bias current
0.250 0.500
μA
Peak Current Limit
Peak current limit threshold
PKLMT = 3.30 V, measured at CSx (rising)
3.27
3.3
60
3.33
100
V
Peak current limit propagation
delay
Measured between CSx (rising) and GDx (falling) edges
ns
PWM Ramp
VRMP
PWM ramp amplitude
3.8
4.0
0.7
4.2
V
PWM ramp offset voltage
TA = 25°C, RRT = 75 kΩ
0.55
PWM ramp offset temperature
coefficient
−2
mV/°C
Gate Drive
GDA, GDB output voltage,
high, clamped
VCC = 20 V, CLOAD = 1 nF
11.5
10
13
15
V
GDA, GDB output voltage, High CLOAD = 1 nF
GDA, GDB output voltage, Low CLOAD = 1 nF
10.5
0.2
18
0.3
30
25
Rise time GDx
Fall time GDx
1 V to 9 V, CLOAD = 1 nF
ns
V
9 V to 1 V, CLOAD = 1 nF
12
GDA, GDB output voltage,
UVLO
VCC = 0 V, IGDA, IGDB = 2.5 mA
0.7
2
Thermal Shutdown
Thermal shutdown threshold
Thermal shutdown recovery
160
140
°C
6
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