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UCC27424DRG4 参数 Datasheet PDF下载

UCC27424DRG4图片预览
型号: UCC27424DRG4
PDF下载: 下载PDF文件 查看货源
内容描述: 双4 -A高速低侧MOSFET驱动器与启用 [Dual 4-A High Speed Low-Side MOSFET Drivers With Enable]
分类和应用: 驱动器
文件页数/大小: 30 页 / 1460 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号UCC27424DRG4的Datasheet PDF文件第1页浏览型号UCC27424DRG4的Datasheet PDF文件第2页浏览型号UCC27424DRG4的Datasheet PDF文件第3页浏览型号UCC27424DRG4的Datasheet PDF文件第5页浏览型号UCC27424DRG4的Datasheet PDF文件第6页浏览型号UCC27424DRG4的Datasheet PDF文件第7页浏览型号UCC27424DRG4的Datasheet PDF文件第8页浏览型号UCC27424DRG4的Datasheet PDF文件第9页  
UCC27423, UCC27424, UCC27425  
SLUS545D NOVEMBER 2002REVISED MAY 2013  
www.ti.com  
ELECTRICAL CHARACTERISTICS (Continued)  
VDD = 4.5V to 15 V, TA = –40°C to 125°C,TA = TJ (unless otherwise noted)  
(1) (2)  
PARAMETER  
ENABLE (ENBA, ENBB)  
VIN_H High-level input voltage  
TEST CONDITION  
MIN  
TYP  
MAX UNITS  
LO to HI transition  
1.7  
1.1  
2.4  
1.8  
2.9  
VIN_L  
Low-level input voltage  
Hysteresis  
HI to LO transition  
2.2  
0.90  
140  
60  
V
0.15  
75  
0.55  
100  
30  
RENBL Enable impedance  
tD3 Propagation delay time (see Figure 2)  
tD4 Propagation delay time (see Figure 2)  
OVERALL  
VDD = 14 V, ENBL = GND  
CLOAD = 1.8 nF  
kΩ  
ns  
CLOAD = 1.8 nF  
100  
150  
INA = 0 V, INB = 0 V  
900  
750  
750  
600  
300  
750  
750  
1200  
600  
1050  
450  
900  
300  
450  
450  
600  
1350  
1100  
1100  
900  
INA = 0 V, INB = HIGH  
INA = HIGH, INB = 0 V  
INA = HIGH, INB = HIGH  
INA = 0 V, INB = 0 V  
UCC27423  
UCC27424  
UCC27425  
All  
μA  
μA  
μA  
μA  
450  
Static operating current,  
VDD = 15 V,  
ENBA = ENBB = 15 V  
INA = 0 V, INB = HIGH  
INA = HIGH, INB = 0 V  
INA = HIGH, INB = HIGH  
INA = 0 V, INB = 0 V  
1100  
1100  
1800  
900  
IDD  
INA = 0 V, INB = HIGH  
INA = HIGH, INB = 0 V  
INA = HIGH, INB = HIGH  
INA = 0 V, INB = 0 V  
1600  
700  
1350  
450  
INA = 0 V, INB = HIGH  
INA = HIGH, INB = 0 V  
INA = HIGH, INB = HIGH  
700  
Disabled, VDD = 15 V,  
ENBA = ENBB = 0 V  
IDD  
700  
900  
(1) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The peak output current rating is the  
combined current from the bipolar and MOSFET transistors.  
(2) The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the Rds(on) of the  
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.  
(a)  
(b)  
+5V  
90%  
90%  
INPUT  
INPUT  
10%  
10%  
0V  
t
t
t
t
f
t
F
D1  
D2  
F
t
F
16V  
90%  
90%  
90%  
t
D1  
t
OUTPUT  
OUTPUT  
D2  
10%  
10%  
0V  
Figure 1. Switching Waveforms for (a) Inverting Driver and (b) Noninverting Driver  
4
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Product Folder Links: UCC27423 UCC27424 UCC27425  
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