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UCC21759QDWRQ1 参数 Datasheet PDF下载

UCC21759QDWRQ1图片预览
型号: UCC21759QDWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: [适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 3.0kVrms、±10A 单通道隔离式栅极驱动器 | DW | 16 | -40 to 150]
分类和应用: 栅极驱动双极性晶体管驱动器
文件页数/大小: 57 页 / 2481 K
品牌: TI [ TEXAS INSTRUMENTS ]
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UCC21759-Q1  
SLUSEB4A – AUGUST 2020 – REVISED DECEMBER 2020  
www.ti.com  
VDD  
D1 D2 D3  
OUTH  
Control  
Circuitry  
OUTL  
CLMPI  
Figure 8-3. Short Circuit Clamping  
8.3.6 Internal Active Miller Clamp  
Active Miller clamp feature is important to prevent the false turn-on while the driver is in OFF state. In  
applications which the device can be in synchronous rectifier mode, the body diode conducts the current during  
the deadtime while the device is in OFF state, the drain-source or collector-emitter voltage remains the same  
and the dV/dt happens when the other power semiconductor of the phase leg turns on. The low internal pull-  
down impedance of UCC21759-Q1 can provide a strong pulldown to hold the OUTL to VEE. However, external  
gate resistance is usually adopted to limit the dV/dt. The Miller effect during the turn on transient of the other  
power semiconductor can cause a voltage drop on the external gate resistor, which boost the gate-source or  
gate-emitter voltage. If the voltage on VGS or VGE is higher than the threshold voltage of the power  
semiconductor, a shoot through can happen and cause catastrophic damage. The active Miller clamp feature of  
UCC21759-Q1 drives an internal MOSFET, which connects to the device gate. The MOSFET is triggered when  
the gate voltage is lower than VCLMPTH, which is 2V above VEE, and creates a low impedance path to avoid the  
false turn on issue.  
VCLMPTH  
VCC  
OUTH  
+
3V to 5.5V  
IN+  
œ
CLMPI  
OUTL  
Control  
Circuitry  
µC  
MOD  
DEMOD  
IN-  
VEE  
COM  
VCC  
Figure 8-4. Active Miller Clamp  
Copyright © 2020 Texas Instruments Incorporated  
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