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UCC21759QDWRQ1 参数 Datasheet PDF下载

UCC21759QDWRQ1图片预览
型号: UCC21759QDWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: [适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 3.0kVrms、±10A 单通道隔离式栅极驱动器 | DW | 16 | -40 to 150]
分类和应用: 栅极驱动双极性晶体管驱动器
文件页数/大小: 57 页 / 2481 K
品牌: TI [ TEXAS INSTRUMENTS ]
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UCC21759-Q1  
SLUSEB4A – AUGUST 2020 – REVISED DECEMBER 2020  
www.ti.com  
hysteresis and UVLO deglitch filter, the internal UVLO protection block will ignore small noises during the normal  
switching transients.  
The timing diagrams of the UVLO feature of VCC and VDD are shown in Figure 7-8, and Figure 7-9. The RDY  
pin on the input side is used to indicate the power good condition. The RDY pin is open drain. During UVLO  
condition, the RDY pin is held in low status and connected to GND. Normally the pin is pulled up externally to  
VCC to indicate the power good. The AIN-APWM function stops working during the UVLO status. The APWM  
pin on the input side will be held LOW.  
8.3.4 Active Pulldown  
UCC21759-Q1 implements an active pulldown feature to ensure the OUTH/OUTL pin clamping to VEE when the  
VDD is open. The OUTH/OUTL pin is in high-impedance status when VDD is open, the active pulldown feature  
can prevent the output be false turned on before the device is back to control.  
VDD  
OUTL  
Ra  
Control  
Circuit  
VEE  
COM  
Figure 8-2. Active Pulldown  
8.3.5 Short Circuit Clamping  
During short circuit condition, the Miller capacitance can cause a current sinking to the OUTH/OUTL/CLMPI pin  
due to the high dV/dt and boost the OUTH/OUTL/CLMPI voltage. The short circuit clamping feature of  
UCC21759-Q1 can clamp the OUTH/OUTL/CLMPI pin voltage to be slightly higher than VDD, which can protect  
the power semiconductors from a gate-source and gate-emitter overvoltage breakdown. This feature is realized  
by an internal diode from the OUTH/OUTL/CLMPI to VDD.  
Copyright © 2020 Texas Instruments Incorporated  
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