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UCC21759QDWRQ1 参数 Datasheet PDF下载

UCC21759QDWRQ1图片预览
型号: UCC21759QDWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: [适用于 IGBT/SiC MOSFET 且具有 DESAT 和内部钳位的汽车类 3.0kVrms、±10A 单通道隔离式栅极驱动器 | DW | 16 | -40 to 150]
分类和应用: 栅极驱动双极性晶体管驱动器
文件页数/大小: 57 页 / 2481 K
品牌: TI [ TEXAS INSTRUMENTS ]
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UCC21759-Q1  
SLUSEB4A – AUGUST 2020 – REVISED DECEMBER 2020  
www.ti.com  
8.2 Functional Block Diagram  
CLMPI  
OUTH  
7
4
6
10  
11  
15  
9
IN+  
INt  
55kQ  
55kQ  
PWM Inputs  
MOD  
DEMOD  
Output Stage  
t
ON/OFF Control  
STO  
VCC  
OUTL  
VDD  
VCC  
UVLO  
VCC Supply  
5
GND  
RDY  
UVLO  
LDO[s for VEE,  
COM and channel  
3
8
COM  
VEE  
12  
13  
14  
16  
Fault Decode  
FLT  
DESAT Protection  
Analog 2 PWM  
2
DESAT  
Fault Encode  
RST/EN  
50kQ  
PWM Driver  
AIN  
1
APWM  
DEMOD  
MOD  
8.3 Feature Description  
8.3.1 Power Supply  
The input side power supply VCC can support a wide voltage range from 3V to 5.5V. The device supports both  
unipolar and bipolar power supply on the output side, with a wide range from 13V to 33V from VDD to VEE. The  
negative power supply with respect to switch source or emitter is usually adopted to avoid false turn on when the  
other switch in the phase leg is turned on. The negative voltage is especially important for SiC MOSFET due to  
its fast switching speed.  
8.3.2 Driver Stage  
UCC21759-Q1 has ±10A peak drive strength and is suitable for high power applications. The high drive strength  
can drive a SiC MOSFET module, IGBT module or paralleled discrete devices directly without extra buffer stage.  
UCC21759-Q1 can also be used to drive higher power modules or parallel modules with extra buffer stage.  
Regardless of the values of VDD, the peak sink and source current can be kept at 10A. The driver features an  
important safety function wherein, when the input pins are in floating condition, the OUTH/OUTL is held in LOW  
Copyright © 2020 Texas Instruments Incorporated  
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