TVP5160
www.ti.com
SLES135E–FEBRUARY 2005–REVISED APRIL 2011
6.10 Memories Tested
Table 6-1. Memories Tested
MANUFACTURER
Samsung
Samsung
Samsung
Samsung
Etron
PART NUMBER
SIZE
MBYTES SPEED
PINS
54
54
50
54
54
54
54
54
50
54
3DYC
3DNR
3DYC+3DNR
K4S641632H-TC75
K4S641632H-TC70
K4S161622E-TC60
K4S161622H-TC60
EM638165TS-6
4 Meg x 16
4 Meg x 16
1 Meg x 16
1 Meg x 16
4 Meg x 16
4 Meg x 16
8 Meg x 16
4 Meg x 16
1 Meg x 16
4 Meg x 16
8 MB
8 MB
2 MB
2 MB
8 MB
8 MB
16 MB
8 MB
2 MB
8 MB
133 MHz
143 MHz
166 MHz
166 MHz
166 MHz
143 MHz
133 MHz
133 MHz
143 MHz
133 MHz
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
N
N
Y
Y
Y
Y
N
Y
Etron
EM638165TS-7
Micron
MT48LC8M16A2TG-75
MT48LC4M16A2TG-75
IS42S16100C1-7TL
IS42S16400B-7TL
Micron
ISSI
ISSI
6.11 Thermal Specification(1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Thermal pad soldered to 4-layer
High-K PCB
θJA
Junction-to-ambient thermal resistance, still air
Junction-to-case thermal resistance, still air
Maximum junction temperature for reliable operation
17.17
°C/W
Thermal pad soldered to 4-layer
High-K PCB
θJC
0.12
°C/W
TJ(MAX)
105
°C
(1) The exposed thermal pad must be soldered to a JEDEC High-K PCB with adequate ground plane. When split ground planes are used,
attach the thermal pad to the digital ground plane.
Copyright © 2005–2011, Texas Instruments Incorporated
Electrical Specifications
103
Submit Documentation Feedback
focus.ti.com: TVP5160
TI [ TEXAS INSTRUMENTS ]
