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TMS320F28232DSC 参数 Datasheet PDF下载

TMS320F28232DSC图片预览
型号: TMS320F28232DSC
PDF下载: 下载PDF文件 查看货源
内容描述: 芯片勘误表 [Silicon Errata]
分类和应用:
文件页数/大小: 18 页 / 180 K
品牌: TI [ TEXAS INSTRUMENTS ]
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Advisory — XINTF Rogue Write for Back-to-Back Accesses to x16/x32 Zones  
www.ti.com  
The timing configuration of the x32 zone must account for the additional delay. The zone  
chip select delay may require additional lead time. The XWE1 delay enable may require  
additional active write time. In addition, specify at least 1 trail cycle for writes to the x32  
zone.  
Access to x32 Zone  
Read or Write  
Access to x16 Zone  
Read or Write  
Access to x32 Zone  
Read or Write  
XZCS (x32)  
XZCS (x16)  
A
A
XA0/XWE1  
for x32 zone  
B
B
B
XA0/XWE1  
for x16 zone  
XWE1  
A0  
XWE1  
A
B
Delayed falling edge of zone chip select for x32 zone.  
Delayed falling edge of XWE1. The x16 zone will not see this delay.  
Figure 5. Behavior After Application of Delay  
The delay can be created by using 74LVC32 quad OR gates or similar logic to create a  
delay line as shown in Figure 6.  
Low 16 Bits  
XZCS (x32)  
CE  
High 16 Bits  
CE  
A0/XWE1  
WE  
XWE1  
Figure 6. Example Delay Line Circuit  
This has been fixed in Rev A silicon. The external delay logic is no longer required to  
avoid this issue in Rev A. The behavior of the XA0/XWE1 signal has been modified such  
that it goes high during inactive cycles. Use the XBANK feature to force inactive cycles  
between back-to-back zone accesses. See the TMS320x2833x, 2823x DSC External  
Interface (XINTF) Reference Guide (SPRU949) for more information.  
14  
TMS320F2833x and TMS320F2823x DSC Silicon Errata  
SPRZ272FSeptember 2007Revised April 2011  
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© 2007–2011, Texas Instruments Incorporated  
 
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