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TM4SN64EPU-12A 参数 Datasheet PDF下载

TM4SN64EPU-12A图片预览
型号: TM4SN64EPU-12A
PDF下载: 下载PDF文件 查看货源
内容描述: 同步动态RAM模块 [SYNCHRONOUS DYNAMIC RAM MODULES]
分类和应用: 内存集成电路动态存储器时钟
文件页数/大小: 16 页 / 273 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TM2SN64EPU 2097152 BY 64-BIT  
TM4SN64EPU 4194304 BY 64-BIT  
SYNCHRONOUS DYNAMIC RAM MODULES  
SMMS681 – AUGUST 1997  
serial presence detect (continued)  
Table 2. Serial Presence-Detect Data for the TM4SN64EPU  
TM4SN64EPU-12A  
TM4SN64EPU-12  
BYTE  
NO.  
DESCRIPTION OF FUNCTION  
ITEM  
DATA  
ITEM  
DATA  
Defines number of bytes written into serial memory during  
module manufacturing  
0
128 bytes  
80h  
128 bytes  
80h  
1
2
3
4
5
6
7
8
Total number of bytes of SPD memory device  
Fundamental memory type (FPM, EDO, SDRAM, . . .)  
Number of row addresses on this assembly  
Number of column addresses on this assembly  
Number of module banks on this assembly  
Data width of this assembly  
256 bytes  
SDRAM  
11  
08h  
04h  
0Bh  
09h  
02h  
40h  
00h  
01h  
256 bytes  
SDRAM  
11  
08h  
04h  
0Bh  
09h  
02h  
40h  
00h  
01h  
9
9
2 banks  
64 bits  
2 banks  
64 bits  
Data width continuation  
Voltage interface standard of this assembly  
LVTTL  
LVTTL  
SDRAM cycle time at maximum supported CAS latency  
(CL), CL = X  
9
t
= 12 ns  
= 9 ns  
C0h  
90h  
00h  
t
= 12 ns  
= 9 ns  
C0h  
90h  
00h  
CK  
CK  
10  
11  
SDRAM access from clock at CL = X  
t
t
AC  
AC  
DIMM configuration type (non-parity, parity, error correcting  
code [ECC])  
Non-Parity  
Non-Parity  
15.6 µs/  
self-refresh  
15.6 µs/  
self-refresh  
12  
Refresh rate/type  
80h  
80h  
13  
14  
SDRAM width, primary DRAM  
x8  
08h  
00h  
x8  
08h  
00h  
Error-checking SDRAM data width  
N/A  
N/A  
Minimum clock delay, back-to-back random column  
addresses  
15  
1 CK cycle  
01h  
1 CK cycle  
01h  
16  
17  
18  
19  
20  
Burst lengths supported  
Number of banks on each SDRAM device  
CAS latencies supported  
CS latency  
1, 2, 4, 8  
0Fh  
02h  
06h  
01h  
01h  
1, 2, 4, 8  
0Fh  
02h  
06h  
01h  
01h  
2 banks  
2 banks  
2, 3  
0
2, 3  
0
Write latency  
0
0
Non-buffered/  
Non-registered  
Non-buffered/  
Non-registered  
21  
SDRAM module attributes  
00h  
00h  
V
tolerance =  
V
tolerance =  
DD  
DD  
(+10%),  
(+10%)/(5%).  
Burst read/write,  
precharge all,  
Burst read/write,  
precharge all,  
22  
SDRAM device attributes: general  
1Eh  
0Eh  
auto precharge  
auto precharge  
23  
24  
25  
26  
Minimum clock cycle time at CL = X – 1  
t
= 15 ns  
= 9 ns  
F0h  
90h  
00h  
00h  
t
t
= 18 ns  
= 10 ns  
N/A  
30h  
A0h  
00h  
00h  
CK  
CK  
Maximum data-access time from clock at CL = X – 1  
Minimum clock cycle time at CL = X – 2  
t
AC  
AC  
N/A  
N/A  
Maximum data-access time from clock at CL = X – 2  
N/A  
12  
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