RM46L450
RM46L850
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SPNS184 –SEPTEMBER 2012
4.10.5 Program Flash
Table 4-24. Timing Requirements for Program Flash
Parameter
MIN
NOM
MAX
300
13
Unit
µs
s
tprog(144bit)
tprog(Total)
Wide Word (144bit) programming time
1.25MByte programming time(1)
40
-40°C to 105°C
0°C to 60°C, for first
25 cycles
3.3
6.6
s
terase(bank0)
Sector/Bank erase time
-40°C to 105°C
0.3
30
4
s
0°C to 60°C, for first
25 cycles
500
ms
twec
Write/erase cycles with 15 year Data Retention -40°C to 105°C
requirement
1000
cycles
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
4.10.6 Data Flash
Table 4-25. Timing Requirements for Data Flash
Parameter
MIN
NOM
MAX
300
660
330
Unit
µs
tprog(144bit)
tprog(Total)
Wide Word (144bit) programming time
40
EEPROM Emulation (bank 7) 64kByte
programming time(1)
-40°C to 105°C
ms
ms
0°C to 60°C, for first
25 cycles
165
EEPROM Emulation (bank 7) Sector/Bank erase time terase(bank7) -40°C to 105°C
0.08
30
8
s
0°C to 60°C, for first
25 cycles
500
ms
twec
Write/erase cycles with 15 year Data Retention -40°C to 105°C
requirement
100000
cycles
(1) This programming time includes overhead of state machine, but does not include data transfer time. The programming time assumes
programming 144 bits at a time at the maximum specified operating frequency.
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