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MSP430F149IPMR 参数 Datasheet PDF下载

MSP430F149IPMR图片预览
型号: MSP430F149IPMR
PDF下载: 下载PDF文件 查看货源
内容描述: 混合信号微控制器 [MIXED SIGNAL MICROCONTROLLER]
分类和应用: 微控制器和处理器外围集成电路装置PC时钟
文件页数/大小: 65 页 / 1221 K
品牌: TI [ TEXAS INSTRUMENTS ]
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ꢀ ꢁꢂꢃ ꢄ ꢅ ꢆ ꢇ ꢄ ꢆ ꢈ ꢀ ꢁꢂꢃ ꢄ ꢅ ꢆ ꢇ ꢃ ꢆ ꢈ ꢀ ꢁꢂꢃ ꢄꢅ ꢆꢇꢃ ꢆꢇ  
ꢀ ꢉꢊꢋ ꢌ ꢁꢉ ꢍ ꢎꢏꢐ ꢀ ꢉꢑꢒꢓ ꢑꢓ ꢎꢔ ꢒꢓ ꢐꢐ ꢋꢒ  
SLAS272F − JULY 2000 − REVISED JUNE 2004  
electrical characteristics over recommended operating free-air temperature (unless otherwise  
noted) (continued)  
Flash Memory  
TEST  
CONDITIONS  
PARAMETER  
V
CC  
MIN NOM  
MAX  
UNIT  
V
CC(PGM/  
ERASE)  
Program and Erase supply voltage  
Flash Timing Generator frequency  
2.7  
3.6  
V
f
I
I
t
t
257  
476  
5
kHz  
mA  
FTG  
Supply current from DV  
Supply current from DV  
during program  
during erase  
2.7 V/ 3.6 V  
2.7 V/ 3.6 V  
2.7 V/ 3.6 V  
2.7 V/ 3.6 V  
3
PGM  
CC  
3
7
mA  
ERASE  
CPT  
CC  
Cumulative program time  
see Note 1  
see Note 2  
4
ms  
Cumulative mass erase time  
Program/Erase endurance  
Data retention duration  
200  
ms  
CMErase  
4
5
10  
10  
100  
cycles  
years  
t
T = 25°C  
J
Retention  
t
t
t
t
t
t
Word or byte program time  
35  
30  
Word  
st  
Block program time for 1 byte or word  
Block, 0  
Block program time for each additional byte or word  
Block program end-sequence wait time  
Mass erase time  
21  
Block, 1-63  
Block, End  
Mass Erase  
Seg Erase  
see Note 3  
t
FTG  
6
5297  
4819  
Segment erase time  
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming  
methods: individual word/byte write and block write modes.  
2. The mass erase duration generated by the flash timing generator is at least 11.1ms ( = 5297x1/f  
,max = 5297x1/476kHz). To  
FTG  
achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is met.  
(A worst case minimum of 19 cycles are required).  
3. These values are hardwired into the Flash Controller’s state machine (t  
FTG  
= 1/f  
FTG  
).  
JTAG Interface  
TEST  
CONDITIONS  
PARAMETER  
V
CC  
MIN NOM  
MAX  
UNIT  
2.2 V  
3 V  
0
0
5
10  
90  
MHz  
MHz  
kΩ  
f
TCK input frequency  
see Note 1  
TCK  
R
Internal pull-up resistance on TMS, TCK, TDI/TCLK see Note 2  
may be restricted to meet the timing requirements of the module selected.  
2.2 V/ 3 V  
25  
60  
Internal  
NOTES: 1. f  
TCK  
2. TMS, TDI/TCLK, and TCK pull-up resistors are implemented in all versions.  
JTAG Fuse (see Note 1)  
TEST  
CONDITIONS  
PARAMETER  
V
CC  
MIN NOM  
MAX  
UNIT  
V
V
Supply voltage during fuse-blow condition  
Voltage level on TDI/TCLK for fuse-blow: F versions  
Supply current into TDI/TCLK during fuse blow  
Time to blow fuse  
T
A
= 25°C  
2.5  
6
V
V
CC(FB)  
7
100  
1
FB  
I
t
mA  
ms  
FB  
FB  
NOTES: 1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched  
to bypass mode.  
39  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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