LM3410, LM3410Q
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SNVS541G –OCTOBER 2007–REVISED MAY 2013
Table 5. Operating Conditions
VIN
VOUT
ILED
VD
3.3V
16.7V
50mA
0.45V
1.60MHz
3mA
fSW
IQ
tRISE
tFALL
RDSON
LDCR
D
10nS
10nS
225mΩ
75mΩ
0.82
IIN
0.31A
ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS
(36)
Quiescent Power Loss:
PQ = IQ x VIN = 10 mW
(37)
Switching Power Loss:
PSWR = 1/2(VOUT x IIN x fSW x tRISE) ≊ 40 mW
PSWF = 1/2(VOUT x IIN x fSW x tFALL) ≊ 40 mW
PSW = PSWR + PSWF = 80 mW
(38)
(39)
(40)
Internal NFET Power Loss:
RDSON = 225 mΩ
(41)
(42)
(43)
PCONDUCTION = IIN2 x D x RDSON = 17 mW
IIN = 310 mA
Diode Loss:
VD = 0.45V
(44)
(45)
PDIODE = VD x ILED = 23 mW
Inductor Power Loss:
RDCR = 75 mΩ
(46)
(47)
PIND = IIN2 x RDCR = 7 mW
Total Power Losses are:
Table 6. Power Loss Tabulation
VIN
VOUT
ILED
VD
3.3V
16.7V
50mA
0.45V
1.6MHz
10nS
POUT
825W
PDIODE
23mW
fSW
IQ
tRISE
IQ
PSWR
PSWF
PQ
40mW
40mW
10mW
17mW
7mW
10nS
3mA
RDSON
LDCR
D
225mΩ
75mΩ
0.82
PCOND
PIND
η
85%
PLOSS
137mW
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