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BQ51050B 参数 Datasheet PDF下载

BQ51050B图片预览
型号: BQ51050B
PDF下载: 下载PDF文件 查看货源
内容描述: 高效率琦V1.1兼容无线电源接收器和电池充电器 [High-Efficiency Qi v1.1-Compliant Wireless Power Receiver and Battery Charger]
分类和应用: 电池无线
文件页数/大小: 31 页 / 2068 K
品牌: TI [ TEXAS INSTRUMENTS ]
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bq51050B  
bq51051B  
www.ti.com  
SLUSB42C JULY 2012REVISED FEBRUARY 2013  
Status Outputs  
The bq5105x provides one status output, CHG. This output is an open-drain NMOS device that is rated to 20 V.  
The open-drain FET connected to the CHG pin will be turned on whenever the output (BAT) of the chagrer is  
enabled. As a note, the output of the charger supply will not be enabled if the VRECT(REG) does not converge at  
the no-load target voltage.  
Communication Modulator  
The bq5105x provides two identical, integrated communication FETs which are connected to the pins COM1 and  
COM2. These FETs are used for modulating the secondary load current which allows bq5105x to communicate  
error control and configuration information to the transmitter. Figure 20 shows how the COMM pins can be used  
for resistive load modulation. Each COMM pin can handle at most a 24Ω communication resistor. Therefore, if a  
COMM resistor between 12Ω and 24Ω is required COM1 and COM2 pins must be connected in parallel. bq5105x  
does not support a COMM resistor less than 12Ω.  
Figure 20. Resistive Load Modulation  
In addition to resistive load modulation, the bq5105x is also capable of capacitive load modulation as shown in  
Figure 21. In this case, a capacitor is connected from COM1 to AC1 and from COM2 to AC2. When the COMM  
switches are closed there is effectively a 22 nF capacitor connected between AC1 and AC2. Connecting a  
capacitor in between AC1 and AC2 modulates the impedance seen by the coil, which will be reflected in the  
primary as a change in current.  
Figure 21. Capacitive Load Modulation  
Copyright © 2012–2013, Texas Instruments Incorporated  
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Product Folder Links: bq51050B bq51051B  
 
 
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